BC846S plastic-encapsulate multi-chip (npn+npn) transistor elektronische bauelemente 19-sep-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features two transistors in one package reduces number of components and board space no mutual interference between the transistors marking 4ft package information absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol value unit collector-base voltage v (br)cbo 80 v collector-emitter voltage v (br)ceo 65 v emitter-base voltage v (br)ebo 6 v collector current i c 0.1 a collector power dissipation p c 200 mw junction & storage temperature t j , t stg 150, -65~150 c electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 80 - - v i c =10 a, i e =0 collector-emitter breakdown voltage v (br)ceo 65 - - i c =10ma , i b =0 emitter-base breakdown voltage v (br)ebo 6 - - i e =10 a , i c =0 collector cut-off current i cbo - - 15 na v cb = 30v, i e =0 emitter cut-off current i ebo - - 5 a v eb =5v, i c =0 dc current gain h fe 110 - - v ce =5v, i c =2ma collector-emitter saturation voltage v ce(sat) - - 0.1 v i c =10ma, i b =0.5ma v ce(sat) - - 0.3 v i c =100ma, i b =5ma base-emitter saturation voltage v be(sat) - 0.77 - v i c =10ma, i b =0.5ma transition frequency f t 100 - - mhz v cb =5v, i e =10ma, f=100mhz collector output capacitance c ob - - 1.5 pf v cb =10v, i e =0, f=1mhz package mpq leader size sot-363 3k 7 inch ref. millimeter ref. millimeter min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 b l f h c j d g k a e 1 2 3 6 5 4 top view
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